Transparent Patternable Large-Area Graphene p-n Junctions by Photoinduced Electron Doping.

We present a novel approach to achieve n-type doping in graphene and create graphene p-n junctions through a photoinduced electron doping method using photobase generators (PBGs). The unique properties of PBGs allow us to spatially and temporally control the doping process via light activation. The selective irradiation of specific regions on the graphene film enables switching their doping from p- to n-type, as confirmed by changes in the electromotive force and Seebeck and Hall coefficients. We demonstrate a stable (over 2 months) high electron mobility exceeding 1000 cm2 V-1s-1 using Hall effect measurements. The precise control of doping and the creation of p-n junctions in graphene offer exciting possibilities for various electronic, optoelectronic, and thermoelectric applications. Furthermore, we fabricate transparent graphene thermocouples with a high electromotive force of approximately ca. 80 µV/K, which validates the reliability and effectiveness of our approach for temperature sensing applications. This work paves the way for high-performance graphene-based electronic devices via controlled doping and patterning techniques. These findings provide valuable insights for the practical implementation of graphene in various fields.

Impedance Characteristics of Monolayer and Bilayer Graphene Films with Biofilm Formation and Growth.

Biofilms are the result of bacterial activity. When the number of bacteria (attached to materials' surfaces) reaches a certain threshold value, then the bacteria simultaneously excrete organic polymers (EPS: extracellular polymeric substances). These sticky polymers encase and protect the bacteria. They are called biofilms and contain about 80% water. Other components of biofilm include polymeric carbon compounds such as polysaccharides and bacteria. It is well-known that biofilms cause various medical and hygiene problems. Therefore, it is important to have a sensor that can detect biofilms to solve such problems. Graphene is a single-atom-thick sheet in which carbon atoms are connected in a hexagonal shape like a honeycomb. Carbon compounds generally bond easily to graphene. Therefore, it is highly possible that graphene could serve as a sensor to monitor biofilm formation and growth. In our previous study, monolayer graphene was prepared on a glass substrate by the chemical vapor deposition (CVD) method. Its biofilm forming ability was compared with that of graphite. As a result, the CVD graphene film had the higher sensitivity for biofilm formation. However, the monolayer graphene has a mechanical disadvantage when used as a biofilm sensor. Therefore, for this new research project, we prepared bilayer graphene with high mechanical strength by using the CVD process on copper substrates. For these specimens, we measured the capacitance component of the specimens' impedance. In addition, we have included a discussion about the possibility of applying them as future sensors for monitoring biofilm formation and growth.

Microscopic Mechanism of Van der Waals Heteroepitaxy in the Formation of MoS2/hBN Vertical Heterostructures.

Recent studies have revealed that van der Waals (vdW) heteroepitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to the formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes a strong limitation on the crystal orientation of grains is still not understood yet. In this work, we have focused on investigating the microscopic mechanism of the self-alignment of MoS2 grains in vdW epitaxial growth on hBN. Using the density functional theory and the Lennard-Jones potential, we found that the interlayer energy between MoS2 and hBN strongly depends on the size and crystal orientation of MoS2. We also found that, when the size of MoS2 is several tens of nanometers, the rotational energy barrier can exceed ∼1 eV, which should suppress rotation to align the crystal orientation of MoS2 even at the growth temperature.

Electrical properties of bilayer graphene synthesized using surface wave microwave plasma techniques at low temperature.

Bilayer graphene was synthesized at low temperature using surface wave microwave plasma techniques where poly(methyl metacrylate) (PMMA) and methane (CH4) were used as carbon sources. Temperature-dependent Hall effect measurements were carried out in a helium atmosphere. Sheet resistance, sheet carrier density and mobility showed weak temperature dependence for graphene from PMMA, and the highest carrier mobility is 740 cm2 V-1 s-1. For graphene from CH4, tunneling of the domain boundary limited carrier transport. The difference in average domain size was determined by Raman signal maps. In addition, residuals of PMMA were detected on graphene from PMMA. The low sheet resistances of graphene synthesized at a temperature of 280 °C using plasma techniques were explained by the PMMA related residuals rather than the domain sizes.

The preparation of Ag nanoparticle-modified single-walled carbon nanotubes and their antibacterial activity.

The sidewall modified single-walled carbon nanotubes (SWNTs) with amino-containing substituents were prepared using the radicals generated by the photolysis of acetonitrile. A subsequent treatment of modified SWNTs with the Ag colloid gave an attachment of Ag nanoparticles on the surface of SWNTs through the functionalized linkages. The Ag nanoparticle-modified SWNTs evaluated by antibacterial tests showed strong activities against Escherichia coli and Staphylococcus aureus. However, the use of Ag nanoparticle-modified SWNTs on simulated body fluid exhibited weaker antibacterial activity.

Characterization of amorphous hydrogenated carbon formed by low-pressure inductively coupled plasma enhanced chemical vapor deposition using multiple low-inductance antenna units.

Three-dimensional plasma enhanced chemical vapor deposition (CVD) of hydrogenated amorphous carbon (a-C:H) has been demonstrated using a new type high-density volumetric plasma source with multiple low-inductance antenna system. The plasma density in the volume of phi 200 mm x 100 mm is 5.1 x 10(10) cm(-3) within +/-5% in the lateral directions and 5.2 x 10(10)cm(-3) within +/-10% in the axial direction for argon plasma under the pressure of 0.1 Pa and the total power as low as 400 W. The uniformity of the thickness and refractive index is within +/-3.5% and +/-1%, respectively, for the a-C:H films deposited on the substrates placed on the six side walls, the top of the phi 60 mm x 80 mm hexagonal substrate holder in the pure toluene plasma under the pressure is as low as 0.04 Pa, and the total power is as low as 300 W. It is also found that precisely controlled ion bombardment by pulse biasing led to the explicit observation in Raman and IR spectra of the transition from polymer-like structure to diamond-like structure accompanied by dehydrogenation due to ion bombardment. Moreover, it is also concluded that the pulse biasing technique is effective for stress reduction without a significant degradation of hardness. The stress of 0.6 GPa and the hardness of 15 GPa have been obtained for 2.0 microm thick films deposited with the optimized deposition conditions. The films are durable for the tribology test with a high load of 20 N up to more than 20,000 cycles, showing the specific wear rate and the friction coefficient were 1.2 x 10(-7) mm3/Nm and 0.04, respectively.

Photochemical modification of diamond films: introduction of perfluorooctyl functional groups on their surface.

Photolysis of perfluoroazooctane with diamond films led the chemical modification of the surface to introduce perfluorooctyl functional groups, confirmed by means of Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and time-of-flight secondary ion mass spectrometry measurements. Diamond films modified with fluorine moieties showed improved frictional property and reduction of surface energy, as evaluated by contact angle to water, compared with a pristine diamond film. The contact angle and friction coefficient of chemically modified diamond film are 118 degrees and 0.1, respectively. The results of the value of the contact angle depending on irradiation times are consistent with those of the F/C ratio of fluorinated diamond films by monitoring with XPS.

Chemical modification of diamond powder using photolysis of perfluoroazooctane.

Photolysis of perfluoroazooctane with diamond powders led to chemical modification of the surface with the introduction of perfluorooctyl ester and ether functional groups, the presence of which was confirmed by means of FT-IR, XPS and 19F NMR measurements.